4H-SiC(0001) basal plane stability during the growth of epitaxial graphene on inverted-mesa structures (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
スポンサーリンク
概要
著者
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Kaneko Tadaaki
School Of Science And Technology Kwansei-gakuin University
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Ushio Shoji
School of Science and Technology, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
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Kutsuma Yasunori
School of Science and Technology, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
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Yoshii Arata
School of Science and Technology, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
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Tamai Naoto
School of Science and Technology, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
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Ohtani Noboru
R&D Center for SiC Materials and Processes, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
関連論文
- Mechanisms for silica-shell formation in marine diatoms
- 4H-SiC(0001) basal plane stability during the growth of epitaxial graphene on inverted-mesa structures (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)