TADA Tetsuya | MIRAI-ASRC, AIST
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概要
MIRAI-ASRC, AIST | 論文
- Reliable Extractions of EOT and V_ in Poly-Si Gate High-k MISFETs through Advanced Modeling of Gate and Substrate Capacitances
- Nonlinear Al Concentration Dependence of the HfAlO_x/Si Conduction Band Offset Studied by Internal Photoemission Spectroscopy
- Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlO_x-Limited Inversion Layer Mobility in n^+poly-Si/HfAlO_x/SiO_2 n-MOSFETs
- Poly-Si Comparable Fermi-Level Pinning of Fully Silicided Platinum Gates on HfO_2
- Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al_2O_3 Films using ^O Isotope