Ikeda Masanori | Department of Electrical and Electronic Engineering, College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan
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- Department of Electrical and Electronic Engineering, College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japanの論文著者
Department of Electrical and Electronic Engineering, College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan | 論文
- Effect of Zn on Segregation of ZnO-Rich SiO2 Layer and Reduced Oxidation Rate in Thermally Oxidized Si(001)
- Quantitative Estimation of Aluminum-Induced Negative Charge Region Top Area of SiO2 Based on Frequency-Dependent AC Surface Photovoltage
- Translation from Schottky Barrier to Atomic Bridging-Type Surface Photovoltages in Cr-Aqueous-Solution-Rinsed Si(001) Wafers
- Enhanced and Retarded SiO
- Negative Oxide Charge in Thermally Oxidized Cr-Contaminated n-Type Silicon Wafers