FENG Gaoming | Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
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概要
- 同名の論文著者
- Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciencesの論文著者
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences | 論文
- Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications
- High Speed Chalcogenide Random Access Memory Based on Si_2Sb_2Te_5
- Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films
- Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer
- Reversible Resistance Switching of GeTi Thin Film Used for Non-Volatile Memory