Nagase Masao | NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan
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- Nagase Masaoの詳細を見る
- 同名の論文著者
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japanの論文著者
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan | 論文
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Threshold Voltage of Si Single-Electron Transistor
- Nanoelectrode Lithography