Ohshima Naoki | Department of Electrical and Electronic Engineering, Toyohashi University of Technology,
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- Department of Electrical and Electronic Engineering, Toyohashi University of Technology,の論文著者
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, | 論文
- Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation
- Reduction of Point Defects and Formation of Abrupt Hetero-Interfaces in Low-Temperature Molecular Beam Epitaxy of GaAs and GaP under Atomic Hydrogen Irradiation