スポンサーリンク
Department of Electrical and Electronic Engineering, Toyohashi University of Technology, | 論文
- Reduction of Point Defects and Formation of Abrupt Hetero-Interfaces in Low-Temperature Molecular Beam Epitaxy of GaAs and GaP under Atomic Hydrogen Irradiation
- Defect-Controlled Selective Epitaxial Growth of GaP on Si by Migration-Enhanced Epitaxy under Atomic Hydrogen Irradiation