Horita Susumu | Japan Advanced Institute for Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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- Japan Advanced Institute for Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japanの論文著者
Japan Advanced Institute for Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan | 論文
- Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process
- Control of Preferential Orientation of Platinum Films on RuO2/SiO2/Si Substrates by Sputtering
- Operation of Ferroelectric Gate Field-Effect Transistor Memory with Intermediate Electrode using Polycrystalline Capacitor and Metal–Oxide–Semiconductor Field-Effect Transistor