Tung Raymond | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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- Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japanの論文著者
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan | 論文
- Highly Conductive Boron Doped Microcrystalline Si Films Deposited by Hot Wire Cell Method and its Application to Solar Cells
- Pulsed-Source MOCVD of High-$k$ Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry