Bellotti Enrico | Boston University, ECE Department, Boston, MA 02215, U.S.A.
スポンサーリンク
概要
関連著者
-
Vaccari Simone
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
-
Zhu Dandan
University of Cambridge, Department of Materials Science and Metallurgy, Cambridge CB2 3QZ, U.K.
-
Humphreys Colin
University of Cambridge, Department of Materials Science and Metallurgy, Cambridge CB2 3QZ, U.K.
-
Calciati Marco
Politecnico di Torino, DET, 10129 Torino, Italy
-
Goano Michele
Politecnico di Torino, DET, 10129 Torino, Italy
-
Bertazzi Francesco
Politecnico di Torino, DET, 10129 Torino, Italy
-
Ghione Giovanni
Politecnico di Torino, DET, 10129 Torino, Italy
-
Bellotti Enrico
Boston University, ECE Department, Boston, MA 02215, U.S.A.
-
Zanoni Enrico
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
-
Garbujo Alessio
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
-
Meneghini Matteo
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
-
Trivellin Nicola
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
-
Meneghesso Gaudenzio
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
-
Meneghini Matteo
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
-
Garbujo Alessio
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
-
Trivellin Nicola
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
-
Meneghesso Gaudenzio
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
-
Zanoni Enrico
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
著作論文
- Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells
- Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells