Humphreys Colin | University of Cambridge, Department of Materials Science and Metallurgy, Cambridge CB2 3QZ, U.K.
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概要
- Humphreys Colin J.の詳細を見る
- 同名の論文著者
- University of Cambridge, Department of Materials Science and Metallurgy, Cambridge CB2 3QZ, U.K.の論文著者
関連著者
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Vaccari Simone
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
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Zhu Dandan
University of Cambridge, Department of Materials Science and Metallurgy, Cambridge CB2 3QZ, U.K.
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Humphreys Colin
University of Cambridge, Department of Materials Science and Metallurgy, Cambridge CB2 3QZ, U.K.
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Calciati Marco
Politecnico di Torino, DET, 10129 Torino, Italy
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Goano Michele
Politecnico di Torino, DET, 10129 Torino, Italy
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Bertazzi Francesco
Politecnico di Torino, DET, 10129 Torino, Italy
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Ghione Giovanni
Politecnico di Torino, DET, 10129 Torino, Italy
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Bellotti Enrico
Boston University, ECE Department, Boston, MA 02215, U.S.A.
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Zanoni Enrico
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
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Garbujo Alessio
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
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Meneghini Matteo
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
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Trivellin Nicola
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
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Meneghesso Gaudenzio
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
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Meneghini Matteo
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
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Garbujo Alessio
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
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Trivellin Nicola
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
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Meneghesso Gaudenzio
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
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Zanoni Enrico
Università di Padova, Department of Information Enginnering, 35131 Padova, Italy
著作論文
- Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells
- Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells