Onojima Norio | Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan
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- Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japanの論文著者
Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan | 論文
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Lattice Distortion in GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy