Kasai Seiya | Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0814, Japan
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- Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0814, Japanの論文著者
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0814, Japan | 論文
- Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNx Gate Insulator
- Novel Nanowire-Based Flip-Flop Circuit Utilizing Gate-Controlled GaAs Three-Branch Nanowire Junctions
- Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure
- Effects of Cl?-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al?O?/AlGaN/GaN Heterostructures
- ドライエッチ面を含むAl_2O_3O_3/AlGaN/GaN構造の界面評価(FET,界面・結晶評価,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))