Iida Satoshi | Department of Physics, Toyama University, 3190 Gofuku, Toyama 930, Japan
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- Department of Physics, Toyama University, 3190 Gofuku, Toyama 930, Japanの論文著者
Department of Physics, Toyama University, 3190 Gofuku, Toyama 930, Japan | 論文
- Mierodefects in an As-Grown Czoehralski Silicon Crystal Studied by Synchrotron Radiation Section Topography with Aid of Computer Simulation
- Observation of Microdefects in As-Grown Czochralski Silicon Crystals by Synchrotron Radiation Topography
- Numerically Simulated and Experimentally Obtained X-Ray Section Topographs of a Spherical Strain Field in a Floating Zone Silicon Crystal
- Polarization Interferometry of X-Ray Diffraction