Norimasa Yafune | Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan
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- Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japanの論文著者
Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan | 論文
- High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
- Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures
- Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack