FABRY Laszlo | Wacker-Chemitronic GmbH
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概要
Wacker-Chemitronic GmbH | 論文
- Dependence of GaAs Ion-Implanted Layer Characteristics on Substrate Resistivity and Residual Acceptor Concentration
- Advances in Silicon Crystal Properties : C-3: CRYSTAL TECHNOLOGY
- Undoped Semi-Insulating GaAs of Very Low Residual Acceptor Concentration : Semiconductors and Semiconductor Devices