Yoshida Makoto | Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea
スポンサーリンク
概要
- Yoshida Makotoの詳細を見る
- 同名の論文著者
- Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Koreaの論文著者
Advanced Technology Development Team 1, Memory R&D Center, Samsung Electronics Co., Hwasung, Kyunggi 445-701, Korea | 論文
- Three Series-Connected Transistor Model for a Recess-Channel-Array Transistor and Improvement of Electrical Characteristics by a Bottom Fin Structure
- A Novel Multifin Dynamic Random Access Memory Periphery Transistor Technology Using a Spacer Patterning through Gate Polycrystalline Silicon Technique