HASEGAWA Masahiro | Department of Photonics, Ritsumeikan University
スポンサーリンク
概要
Department of Photonics, Ritsumeikan University | 論文
- Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy
- Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy
- RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
- Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors
- Growth of Hlgh-Electron-Mobility InN by RF Molecular Beam Epitaxy : Semiconductors