Nishikawa Satoshi | Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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- Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japanの論文著者
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan | 論文
- A Stark Spectroscopic Study on a Flavin Langmuir–Blodgett Film
- Electric-Field-Induced Fluorescence Quenching in a Metal-Insulator-Metal Device Composed of Flavin-Porphyrin Hetero-Type Langmuir-Blodgett Films
- Photoelectric Properties Based on Electric Field Modulation of Photoinduced Electron Transfer Processes in Flavin-Porphyrin Hetero-type Langmuir–Blodgett Films
- Lasing Mechanism Analysis of Self-Pulsating Distributed Feedback Laser Diodes and Successful Demonstration of All-Optical Signal Recovery at 40 Gbps
- Shuttle Activation Annealing of Implanted Al in 4H-SiC