Kikuchi Yoshiaki | Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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- Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japanの論文著者
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan | 論文
- Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy
- Planar Metal–Oxide–Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In situ Boron-Doped Selective Silicon Epitaxy
- Dual metal/high-k gate-last complementary metal-oxide-semiconductor field-effect transistor with SiBN film and characteristic behavior in sub-1-nm equivalent oxide thickness