Sasaki Tadahiro | Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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- Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japanの論文著者
Electron Devices Laboratory, Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan | 論文
- Anomalous Substrate Current in Metal–Oxide–Semiconductor Field-Effect Transistors with Large Channel Width
- Primary Factor Extracted for Anomalous Decline of Drain Current in Metal--Oxide--Semiconductor Field-Effect Transistors
- Optimization of Deposition Process and Microscopic Characterization of Highly Oriented Aluminum Nitride Thin Films for Bimorph Structures of Piezoelectric Tunable Capacitors