Chan Yi-Jen | Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.

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• Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C.の論文著者

Department of Electrical Engineering, National Central University Jungli, Taiwan 32054, R.O.C. | 論文

• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors
• Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

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