PARK Sangho | Seoul National Univ., School Of Electrical Engineering and Computer Science
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- Seoul National Univ., School Of Electrical Engineering and Computer Scienceの論文著者
Seoul National Univ., School Of Electrical Engineering and Computer Science | 論文
- Pt Buried Gate E-pHEMT with High V_ and Reduced Surface Trap Effects
- The Gate Length Reducing Process for Pseudomorphic In_Al_As/In_Ga_As HEMTs
- In_GaP/Al_GaAs E-pHEMT with High Gate Forward Turn-on Voltage & High Transconductance Linearity
- High-Speed Digital Circuits Using RTD as Load-Element
- Novel MOBILE Circuits Using 3 RTDs Operating up to 12.5Gb/s