Nagata Kouji | Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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概要
Department of Electrical and Electronic Engineering, Musashi Institute of Technology | 論文
- Initial Stage of Oxidation of Hydrogen-Termimated Si(100)-2×1 Surface
- Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films
- Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
- Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
- Superconducting Properties of Ultrathin Films of YBa_2Cu_3O_x Prepared by Metalorganic Chemical Vapor Deposition at 500℃