Kim Hyun | Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co., Ltd., San #24, Nonseo-dong, Giheung-gu, Yongin, Gyunggi 446-711, Korea
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- Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co., Ltd., San #24, Nonseo-dong, Giheung-gu, Yongin, Gyunggi 446-711, Koreaの論文著者
Advanced Technology Team 2, Semiconductor R&D center, Samsung Electronics Co., Ltd., San #24, Nonseo-dong, Giheung-gu, Yongin, Gyunggi 446-711, Korea | 論文
- A Characterization of Endurance in 64 Mbit Ferroelectric Random Access Memory by Analyzing the Space Charge Concentration
- Enhancement of Seebeck Coefficient in Bi0.5Sb1.5Te3 with High-Density Tellurium Nanoinclusions