Higashi Seiichirou | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan

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概要

関連著者

OHTA Akio
Department of Chemistry and Chemical Engineering, Faculty of Engineering, Kanazawa University
Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
HIGASHI Seiichirou
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
Kawahara Takayuki
Semiconductor Leading Edge Technologies Inc.
Nakagawa Hiroshi
Department Of Biological Sciences Tokyo Institute Of Technology
Ohta Akio
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
Murakami Hideki
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
Kawahara Takayuki
Semiconductor Leading Edge Technologies, Inc., 34-1 Miyukigaoka Tukuba, Ibaraki 305-8501, Japan
Higashi Seiichirou
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
Miyazaki Seiichi
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Nakagawa Hiroshi
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan

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著作論文

Impact of Rapid Thermal O2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)

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