Nakagawa Ryo | Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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- Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japanの論文著者
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan | 論文
- 2-Step Growth Method and Microcrystalline Silicon Thin Film Solar Cells Prepared by Hot Wire Cell Method
- Analysis of Charge Accumulation in Pentacene Feld Effect Transistor with Ferroelectric Gate Insulator using Maxwell–Wagner Model
- Stochastic Single-Molecule Conductance Switching of Nitro-Substituted Oligo(phenylene–ethynylene) in Matrix of Low-Density Alkanethiol Self-Assembled Monolayers
- Observation of Current Modulation through Self-Assembled Monolayer Molecule in Transistor Structure
- Electric-Field-Induced Second Harmonic Generation from Vacuum-Evaporated Metallophthalocyanine Film/Metal Electrode Interface