OGAWA Yoshifumi | Senior Member, IEEE
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概要
Senior Member, IEEE | 論文
- Detailed Investigation of Geometrical Factor for Pseudo-MOS Transistor Technique
- Possible Influence of the Schottky Contacts on the Characteristics of Ultrathin SOI Pseudo-MOS Transistors
- Engineering S/D Diffusion for Sub-100-nm Channel SOI MOSFETs
- Design Guideline for Minimum Channel Length in Silicon-on-Insulator (SOI) MOSFET