Dong-Won Kim | Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 449-711, Republic of Korea

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概要

関連著者

Jung Sung-woo
National Center For Nanomaterials Technology (ncnt)
BAEK Chang-Ki
Korea Institute for Advanced Study
Yun Young
Semiconductor Device Research Center Matsushita Electric Industrial Co. Ltd.
Rock-Hyun Baek
Pohang University of Science and Technology (POSTECH), Department of Electronic and Electrical Engineering, Gyeongbuk, Pohang 790-784, Republic of Korea
Baek Rock-Hyun
Pohang University of Science and Technology (POSTECH), Department of Electronic and Electrical Engineering, Gyeongbuk, Pohang 790-784, Republic of Korea
Dong-Won Kim
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 449-711, Republic of Korea
Jeong-Soo Lee
National Center for Nanomaterials and Technology (NCNT), Pohang, Gyeongbuk 790-784, Republic of Korea
Dae M.
Korea Institute for Advanced Study (KIAS), School of Computational Science, Seoul 130-722, Republic of Korea
Yoon-Ha Jeong
National Center for Nanomaterials and Technology (NCNT), Pohang, Gyeongbuk 790-784, Republic of Korea
Dong-Won Kim
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 449-711, Republic of Korea
Sung-Woo Jung
National Center for Nanomaterials and Technology (NCNT), Pohang, Gyeongbuk 790-784, Republic of Korea

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著作論文

Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the $Y$-Function Technique

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