Nishimura Kazumasa | Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japan
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- Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japanの論文著者
Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japan | 論文
- Tunnel Magnetoresistance above 170% and Resistance--Area Product of 1 $\Omega$ (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
- Characterization of Ultrathin Fe--Co Layer Grown on Amorphous Co--Fe--B by In situ Reflective High-Energy Electron Diffraction
- Characterization of Ultrathin Fe-Co Layer Grown on Amorphous Co-Fe-B by In situ Reflective High-Energy Electron Diffraction