NISHI Seiji | Semiconductor Technology Laboratories, Oki Electric Industry Co., Ltd.
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概要
Semiconductor Technology Laboratories, Oki Electric Industry Co., Ltd. | 論文
- Shift in Threshold Voltage and Schottky Barrier Height of Molybdenum Gate Gallium Arsenide Field Effect Transistors after High Forward Gate Current Test
- Schottky Characteristics of InAlAs Grown by Metal-Organic Chemical Vapor Deposition
- Development of the High Aspect-Ratio Y-Shaped Gate Process for HEMT
- The Change of Mo/GaAs Schottky Characteristics by the Forward Gate Current