MAEDA Masatoshi | Advanced Industrial Science & Technology, CREST
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概要
Advanced Industrial Science & Technology, CREST | 論文
- Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
- Emission Properties from Carbon Nanotube Field Emitter Arrays (FEAS) Grown on Si Emitters : Surfaces. Interfaces, and Films
- Single-Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel
- Single-Electron Transistor with Ultra-High Coulomb Energy of 5000 K Using Position Controlled Grown Carbon Nanotube as Channel