Takenaka Mitsuru | Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japanの論文著者
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan | 論文
- Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors under Full Ballistic Transport
- Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal--Organic Source
- Resonator Fiber Optic Gyro with Bipolar Digital Serrodyne Scheme Using a Field-Programmable Gate Array-Based Digital Processor
- Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers