Park Se | Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
スポンサーリンク
概要
- Park Se Hwanの詳細を見る
- 同名の論文著者
- Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Koreaの論文著者
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea | 論文
- Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory
- A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device
- Variation of Threshold Voltage and ON-Cell Current Caused by Cell Gate Length Fluctuation in Virtual Source/Drain NAND Flash Memory
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)