Shinohara Keisuke | National Institute of Info. & Com. Tech.
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概要
National Institute of Info. & Com. Tech. | 論文
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
- Recovery of (411)A Superflat Interfaces in GaAs/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy
- In-Situ Counting of Process-Induced Particles