Higashi Seiichiro | Department of Semiconductor Electronics and Integration Science, Graduate School of Advance Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
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- 同名の論文著者
- Department of Semiconductor Electronics and Integration Science, Graduate School of Advance Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japanの論文著者
Department of Semiconductor Electronics and Integration Science, Graduate School of Advance Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan | 論文
- In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
- Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
- Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique
- Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate
- Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation