KIM Juhyung | MD laboratory, Samsung Advanced Institute of Technology
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概要
MD laboratory, Samsung Advanced Institute of Technology | 論文
- High Pressure H_2/D_2 Annealed SONOS Nonvolatile Memory Devices
- Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO2 as Charge-Trapping Layer and Al2O3 as Blocking Layer