弓野 健太郎 | Department of Materials Engineering, School of Engineering, The University of Tokyo
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- 同名の論文著者
- Department of Materials Engineering, School of Engineering, The University of Tokyoの論文著者
Department of Materials Engineering, School of Engineering, The University of Tokyo | 論文
- Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
- High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
- Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge MetalOxideSemiconductor Field-Effect Transistors
- Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks
- Oxidation Rate Reduction of Ge with O_2 Pressure Increase