ISHIKAWA Masayuki | Toshiba Materials and Devices Laboratories
スポンサーリンク
概要
Toshiba Materials and Devices Laboratories | 論文
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
- The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
- Characterization of Computer Controlled Gap Single Crystals : C-2: III-V CRYSTALS/JOSEPHSON JUNCTION