Tanaka Kouji | New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan | 論文
- Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface
- Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces
- Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal–Oxide–Semiconductor Field-Effect Transistors
- Microcrystalline/Amorphous Thin Si Films Deposition by a Newly Developed Dual Injection System Employing Hydrogen Plasma and Silicon Radicals at Low Temperature (300 °C) Chemical Vapor Deposition Process
- High-Rate Deposition of Amorphous Silicon Films by Microwave-Excited High-Density Plasma