OHKUBO Hiroshi | Department of Physics, Kurume University
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概要
Department of Physics, Kurume University | 論文
- Carrier Transport Mechanisms of InSe p-n Homojunction : Semiconductors and Semiconductor Devices
- Annealing Behavior of Zn-Doped p-Type InSe
- Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
- Optical Absorption Edge in γ-InSe(Excitons and Phonons)
- Optical and Electrical Properties of Layer Semiconductor n-InSe Doped with Sn