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Department of Physics, Kurume University | 論文
- Carrier Transport Mechanisms of InSe p-n Homojunction : Semiconductors and Semiconductor Devices
- Annealing Behavior of Zn-Doped p-Type InSe
- Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals
- Optical Absorption Edge in γ-InSe(Excitons and Phonons)
- Optical and Electrical Properties of Layer Semiconductor n-InSe Doped with Sn
- Optical and Electrical Properties of p-GaAe Doped with Sb
- Annealing Behavior of Layer Semiconductor p-InSe Doped with Hg
- Electrical Properties of p- and n-GaSe Doped with As and Ge
- Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
- Annealing Behavior of Deep Trap Level in p-GaTe
- Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
- Near Band Edge Photoacoustic Spectra of p-Si Single Crystals
- Impurity Levels in Layered Semiconductor GaS Doped with Cu
- Phonon Hole Burning Created by Pulsed RF Electric Field in Impedance Spectrum