UEKI Takemi | LSI Laboratories, NTT
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概要
LSI Laboratories, NTT | 論文
- Bulk Single Crystal Growth of Bi_TiO_ by the Czochralski Method
- Octahedral Void Structure Observed at the Grown-In Defects in the Bulk of Standard CZ-Si for MOSLSIs
- Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in MOSLSIs