Yoshida Naohito | High Frequency and Optical Device Works, Mitsubishi Electric Corporation, Itami, Hyogo 664-8641, Japan

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概要

関連著者

Hisaka Takayuki
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
Sasaki Hajime
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
Yoshida Naohito
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
Villanueva Anita
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology
Hayashi Kazuo
High Frequency and Optical Device Works, Mitsubishi Electric Corporation, Itami, Hyogo 664-8641, Japan
Nogami Yoichi
High Frequency and Optical Device Works, Mitsubishi Electric Corporation, Itami, Hyogo 664-8641, Japan
del Alamo
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Room 39-567, Cambridge, MA 02139, U.S.A.
Sasaki Hajime
High Frequency and Optical Device Works, Mitsubishi Electric Corporation, Itami, Hyogo 664-8641, Japan
Yoshida Naohito
High Frequency and Optical Device Works, Mitsubishi Electric Corporation, Itami, Hyogo 664-8641, Japan
Villanueva Anita
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Room 39-567, Cambridge, MA 02139, U.S.A.
Hisaka Takayuki
High Frequency and Optical Device Works, Mitsubishi Electric Corporation, Itami, Hyogo 664-8641, Japan

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著作論文

Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation

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