AHN Sung | Advanced Technology Center, Samsung Electronics Co. Ltd.
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概要
Advanced Technology Center, Samsung Electronics Co. Ltd. | 論文
- Effect of the Silicidation Reaction Condition on the Gate Oxide Integrity in Ti-polycide Gate
- Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al_2O_3p-Si Metal-Oxide-Semiconductor Capacitor