HOSHI Yusuke | Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University
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概要
- 同名の論文著者
- Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City Universityの論文著者
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University | 論文
- Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
- Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
- On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
- Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
- Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method