Ishikawa Mitsuteru | Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories
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概要
Toshiba Corporation, Advanced Semiconductor Devices Research Laboratories | 論文
- Thermal Analysis for GaN Laser Diodes
- Analysis of Device Characteristics for InGaN Semiconductor Lasers
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
- The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
- Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers