Kwan Pik-Kwan | Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin, Taiwan 640, R.O.C.
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- Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin, Taiwan 640, R.O.C.の論文著者
Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin, Taiwan 640, R.O.C. | 論文
- Drift and Hysteresis Effects on AlN/SiO2 Gate pH Ion-Sensitive Field-Effect Transistor
- SnO2 Separative Structure Extended Gate H+-Ion Sensitive Field Effect Transistor by the Sol–Gel Technology and the Readout Circuit Developed by Source Follower