Ishikawa Yasuhiko | Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japanの論文著者
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan | 論文
- Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
- Effect of Mesa Shape on Threading Dislocation Density in Ge Epitaxial Layers on Si after Post-Growth Annealing
- Strain and Absorption Coefficient of Finite Ge Structures on Si
- A New Approach Using Backside Scatterers for Efficiency Enhancement in Thin Si Solar Cells
- Photocurrents in Carbon Nanotubes with Various Diameters under High-Intensity Laser Irradiation