Miyake Masataka | Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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- Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japanの論文著者
Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan | 論文
- Laterally Diffused Metal Oxide Semiconductor Model for Device and Circuit Optimization
- Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-$k$/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm